NEC's C TO X BAND
N-CHANNEL GaAs MES FET NE722S01
FEATURES
鈥?HIGH POWER GAIN:
GS = 6 dB TYP at f = 12 GHz
鈥?OUTPUT POWER
(at 1 dB compression):
15 dB TYP at f = 12 GHz
鈥?LOW NOISE/HIGH GAIN:
NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz
鈥?GATE LENGTH:
L
G
= 0.8
碌m
(recessed gate)
鈥?GATE WIDTH:
W
G
= 400
碌m
2
OUTLINE DIMENSION
(Units in mm)
PACKAGE OUTLINE SO1
2.0 鹵 0.2
1
2.
0
鹵
0.
2
DESCRIPTION
NEC's NE722S01 is a low cost GaAs MESFET suitable for
both amplifier and oscillator applications through X-band.
The device features a 0.8 micron recessed gate, triple
epitaxial technology and is fabricated using ion implantation
for improved RF and DC performance and uniformity. This
device's low phase noise and high fT makes it a excellent
choice for oscillator applications on a digital LNB (Low
Noise Block). The NE722S01 is housed in a low cost plastic
package which is available in Tape and Reel.
NEC's stringent quality assurance and test procedures
ensure the highest reliability performance.
0.125 鹵 0.05
P
3
0.65 TYP
1.9 鹵 0.2
1.6
4
0.5
TYP
2.0鹵0.2
1. Source
2. Drain
3. Source
4. Gate
1.5 MAX
0.4 MAX
4.0 鹵 0.2
APPLICATIONS
鈥?C to X band low noise amplifiers
鈥?C to X band oscillators
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
GSO
I
DSS
V
GS
g
m
G
S
P1dB
NF
Ga
PARAMETERS AND CONDITIONS
Gate to Source Leak Current, V
GS
= -5 V
Saturated Drain Current, V
DS
= 3 V, V
GS
= 0 V
Gate to Source Cutoff Voltage, V
DS
= 3 V, I
D
= 100
碌A(chǔ)
Transconductance, V
DS
= 3 V, I
DS
= 30 mA
Power Gain, V
DS
= 3 V, I
DS
= 30 mA, f = 12 GHz
Output Power at 1 dB Gain Compression Point at
V
DS
= 3 V, I
DS
= 30 mA, f = 12 GHz
Noise Figure, V
DS
= 3 V, I
DS
= 10 mA, f = 4 GHz
Associated Gain, V
DS
= 3 V, I
DS
= 10 mA, f = 4 GHz
UNITS
uA
mA
V
mS
dB
dBm
dB
dB
鈥?/div>
鈥?/div>
MIN
鈥?/div>
60
-0.5
20
鈥?/div>
NE722S01
S01
TYP
1.0
90
鈥?/div>
45
6
15.0
0.9
12
鈥?/div>
_
MAX
10
120
-4.0
鈥?/div>
鈥?/div>
California Eastern Laboratories
NE722S01-T1B1相關(guān)型號(hào)PDF文件下載
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