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NE72118 Datasheet

  • NE72118

  • NEC [C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs M...

  • NEC   NEC

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PRELIMINARY DATA SHEET
C TO X BAND AMPLIFIER
C TO X BAND OSC
N-CHANNEL GaAs MESFET
FEATURES
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HIGH POWER GAIN:
Gs = 5.5 dB TYP at f = 12 GHz
GATE LENGTH:
Lg = 0.8
碌m
(recessed gate)
GATE WIDTH:
Wg = 330
碌m
4 PINS SUPER MINI MOLD
0.3
-0.05
NE72118
PACKAGE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 18
2.1
鹵
0.2
1.25
鹵
0.1
2
3
2.0
鹵
0.2
(1.25)
0.4
-0.05
0.9
鹵
0.1
The NE72118 is a high performance gallium arsenide metal
semiconductor field effect transistor (MESFET), housed in a
low cost plastic surface mount package (SOT 23 style). This
device's low phase noise and high f
T
make it an excellent
choice for oscillator applications on a digital LNB (Low Noise
Block).
NEC's stringent quality assurance and test procedures ensure
the highest reliability performance.
0.3
PIN CONNECTIONS
1. Source
2. Gate
3. Source
4. Drain
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
GSO
I
DSS
V
GS (OFF)
g
m
PN
Gs
Po
(1dB)
PARAMETERS AND CONDITIONS
Gate to Source Leak Current at V
GS
= -5 V
Saturated Drain Current at V
DS
= 3 V, V
GS
= 0 V
Gate to Source Cut off Voltage at V
DS
= 3 V, I
D
= 100
碌A(chǔ)
Transconductance at V
DS
= 3 V, I
D
= 30 mA
UNITS
碌A(chǔ)
碌A(chǔ)
V
mS
30
-0.5
20
MIN
NE72118
18
TYP
1.0
60
-2.0
40
-110
-85
5.5
13.5
MAX
10
100
-4.0
Phase Noise at V
DS
=3 V, I
D
=30mA, f=11GHz,100KHz offset dBc/Hz
Phase Noise at V
DS
=3 V, I
D
=30mA, f=11GHz, 10KHz offset dBc/Hz
Power Gain at V
DS
= 3 V, I
D
= 30 mA, f = 12 GHz
Output Power at 1 dB Gain Compression Point at
V
CE
= 3 V, I
D
= 30 mA, f = 12 GHz
dB
dBm
California Eastern Laboratories
0 to 0.1
0.15
-0.05
+0.1
0.3
-0.05
+0.1
1
4
+0.1
DESCRIPTION
0.60
(1.3) 0.3
-0.05
0.65
+0.1
+0.1
TAPE & REEL PACKAGING
V53

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