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NE698M01 Datasheet

  • NE698M01

  • NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMP...

  • 8頁(yè)

  • NEC   NEC

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PRELIMINARY DATA SHEET
NPN EPITAXIAL SILICON
TRANSISTOR FOR MICROWAVE
HIGH-GAIN AMPLIFICATION
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
HIGH f
T
:
17 GHz TYP at 2 V, 7 mA
LOW NOISE FIGURE:
NF = 1.1 dB TYP at f = 2 GHz, 2 V, 1 mA
HIGH GAIN:
|S
21E
|
2
= 15.5 dB TYP at f = 2 GHz
6 PIN SMALL MINI MOLD PACKAGE
EXCELLENT LOW VOLTAGE,
LOW CURRENT PERFORMANCE
0.65
2.0
鹵
0.2
1.3
2
1
NE698M01
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M01
TOP VIEW
2.1
鹵
0.1
1.25
鹵
0.1
6
0.2 (All Leads)
5
T1E
3
4
DESCRIPTION
The NE698M01 is an NPN high frequency silicon epitaxial
transistor (NE686) encapsulated in an ultra small 6 pin SOT-
363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE698M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations.
0.9
鹵
0.1
0.7
0.15
- 0.05
0 ~ 0.1
+0.10
PIN CONNECTIONS
4. Emitter
1. Emitter
5. Emitter
2. Emitter
6. Collector
3. Base
Note: Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE1
f
T
C
RE2
|S
21E
|
2
NF
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain at V
CE
= 2 V, I
C
= 7 mA
Gain Bandwidth Product at V
CE
= 2 V, I
C
=7mA, f = 2.0GHz
Feedback Capacitance at V
CB
= 2 V, I
E
=0, f=1 MHz
Insertion Power Gain at V
CE
= 2 V, I
C
= 7 mA, f = 2.0 GHz
Noise Figure at V
CE
= 2 V, I
C
= 1 mA, f = 2.0 GHz
GHz
pF
dB
dB
13
UNITS
碌A(chǔ)
碌A(chǔ)
70
17
0.1
15.5
1.1
1.8
0.15
MIN
NE698M01
M01
TYP
MAX
0.1
0.1
140
Notes:
1. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
California Eastern Laboratories

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