NEC'S NPN SILICON EPITAXIAL
TRANSISTOR
FEATURES
鈥?OUTPUT POWER AT 1dB COMPRESSION POINT:
24.5 dBm TYP @F = 1.9 GH
Z
, V
CE
= 3.6 V, Class AB,
Duty 1/8
鈥?4 PIN MINI MOLD PACKAGE:
NE68939
NE68939
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 39
+0.2
2.8 -0.3
+0.2
1.5 -0.1
+0.10
0.4 -0.05
(LEADS 2, 3, 4)
2.9
鹵
0.2
0.95
0.85
2
3
1.9
DESCRIPTION
NEC's NE68939 is a low voltage, NPN Silicon Bipolar Tran-
sistor for pulsed power applications. The device is designed
to operate from a 3.6 V supply, and deliver over 1/4 watt of
power output at frequencies up to 2.0 GH
Z
with a 1:8 duty
cycle. These characteristics make it an ideal device for TX
driver stage in a 1.9 GH
Z
digital cordless telephone (DECT or
PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Mini-
mold package and is available on tape and reel.
The NE68939 transistors are manufactured to NEC's strin-
gent quality assurance standards to ensure highest reliability
and consistent superior performance.
1
+0.10
0.6 -0.05
4
1) Collector
2) Emitter
3) Base
4) Emitter
+0.2
1.1 -0.1
0.8
0.16 +0.10
-0.06
5藲
0 to 0.1
5藲
ELECTRICAL CHARACTERISTICS
(T
A
= 25
擄C)
PART NUMBER
PACKAGE CODE
SYMBOLS
I
CBO
I
EBO
h
FE
P
-1
G
p
PARAMETERS
Collector Cutoff Current, V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current, V
EB
= 1 V, I
C
= 0
DC Current Gain, V
CE
= 3.6 V, I
C
= 100 mA
Output Power
Power Gain
Collector Efficiency
V
CE
= 3.6 V, f = 1.9 GH
Z
ICq = 2 mA (Class AB)
Duty 1/8
dBm
dB
%
M
S
6.5
50
UNITS
碌A
碌A
30
24.5
8
62
10.0
MIN
NE68939
39
TYP
MAX
2.5
2.5
畏
C
T
ON
Maximum Device On Time
California Eastern Laboratories
1
2
3
