音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

NE687M13 Datasheet

  • NE687M13

  • NECs NPN SILICON TRANSISTOR

  • 196.92KB

  • 8頁

  • CEL   CEL

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

NEC's NPN SILICON TRANSISTOR NE687M13
FEATURES
鈥?/div>
NEW MINIATURE M13 PACKAGE:
鈥?Small transistor outline
鈥?1.0 X 0.5 X 0.5 mm
鈥?Low profile / 0.50 mm package height
鈥?Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 14 GHz
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M13
0.7鹵0.05
0.5
+0.1
帽0.05
0.2
+0.1
帽0.05
0.15
+0.1
帽0.05
(Bottom View)
0.3
鈥?/div>
鈥?/div>
0.35
1.0
+0.1
帽0.05
0.7
LOW NOISE FIGURE:
NF = 1.4 dB at 2 GHz
2
3
W2
0.35
1
0.15
+0.1
帽0.05
DESCRIPTION
NEC's NE687M13 transistor is designed for low noise, high
gain, and low cost requirements. This high f
T
part is well suited
for very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M13" package is ideal for today's
portable wireless applications.
0.1
0.1
0.2
0.2
0.125
+0.1
帽0.05
0.5鹵0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE
I
CBO
I
EBO
C
RE
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
GHz
dB
dB
dB
dB
碌A(chǔ)
碌A(chǔ)
pF
0.4
8.5
6.0
70
MIN
9.0
7.0
NE687M13
2SC5618
M13
TYP
14.0
12.0
1.4
1.5
10.0
9.0
130
0.1
0.1
0.8
2.0
2.0
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Noise Figure at V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz, Z
s
= Z
opt
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz, Z
s
= Z
opt
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Forward Current Gain at V
CE
= 2 V, I
C
= 20 mA,
Note 2
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 2 V, I
E
= 0, f = 1 MHz,
Note 3
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal of the bridge.
California Eastern Laboratories

NE687M13 產(chǎn)品屬性

  • NEC

  • Single

NE687M13相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    NPN SILICON HIGH FREQUENCY TRANSISTOR
    CEL
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    CEL
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    CEL
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    CEL
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    CEL
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-343R
    ETC

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時間周一至周五
9:00-17:30

關(guān)注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！