鈥?/div>
2
1.4 鹵0.1
0.45
(0.9)
0.45
3
+0.1
0.3 -0
DESCRIPTION
NEC's NE687M03 transistor is designed for low noise, high
gain, and low cost requirements. This high f
T
part is well suited
for very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low pro鏗乴e/鏗俛t lead style "M03" package is ideal for today's
portable wireless applications. The NE687 is also available in
six different low cost plastic surface mount package styles.
1
+0.1
0.2 -0
0.59鹵0.05
+0.1
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE
2
I
CBO
I
EBO
C
RE
3
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Noise Figure at V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Forward Current Gain at V
CE
= 2 V, I
C
= 20 mA
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 2 V, I
E
= 0, f = 1 MHz
渭A
渭A
pF
0.4
UNITS
GHz
GHz
dB
dB
dB
dB
8.5
6
70
MIN
9
7
NE687M03
2SC5436
M03
TYP
14
12
1.3
1.3
10
9.0
130
0.1
0.1
0.8
2
2
MAX
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
鈮?/div>
350
渭s,
duty cycle
鈮?/div>
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories
1
2
3
4
