鈥?/div>
1
0.25
1.0
0.4
DESCRIPTION
The NE685M23 transistor is designed for low noise, high gain,
and low cost requirements. This high f
T
part is well suited for
very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/ceramic substrate style "M23" package is ideal for
today's portable wireless applications. The NE685 is also
available in six different low cost plastic surface mount pack-
age styles.
0.6
0.15
2
3
0.25
0.2
0.15
BOTTOM VIEW
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE2
I
CBO
I
EBO
C
RE3
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
dB
dB
碌A(chǔ)
碌A(chǔ)
pF
0.4
7
75
MIN
NE685M23
2SC5652
M23
TYP
12
1.5
10
145
0.1
0.1
0.7
2.5
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
Forward Current Gain at V
CE
= 3 V, I
C
= 10 mA
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
0.55
California Eastern Laboratories
1
2
