鈥?/div>
1
0.25
1.0
0.4
2
3
0.25
DESCRIPTION
0.6
0.15
0.2
0.15
The NE681M23 transistor is ideal for low noise, high gain,
and low cost amplifier applications. NEC's new low profile/
ceramic substrate style "M23" package is ideal for today's
portable wireless applications. The NE681 is also available
in chip, Micro-x, and six different low cost plastic surface
mount package styles.
BOTTOM VIEW
0.55
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE2
I
CBO
I
EBO
C
RE3
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
dB
dB
碌A
碌A
pF
10
80
MIN
4.5
NE681M23
2SC5650
M23
TYP
7
1.4
12
145
0.8
0.8
0.9
2.7
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories
1
2
