鈥?/div>
XX
1
+0.1
1.0 鈥?.05
3
0.7
0.35
2
+0.1
0.15 鈥?.05
0.2
3
+0.1
0.2 鈥?.05
0.1
0.1
0.2
DESCRIPTION
NEC's NE681M13 transistor is ideal for low noise, high gain,
and low cost amplifier applications. NEC's new low profile/
flat lead style "M13" package is ideal for today's portable
wireless applications. The NE681 is also available in chip,
Micro-x, and six different low cost plastic surface mount
package styles.
0.5鹵0.05
+0.1
0.125 鈥?.05
Bottom View
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE2
I
CBO
I
EBO
C
RE3
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
dB
dB
碌A(chǔ)
碌A(chǔ)
pF
10
80
MIN
4.5
NE681M13
2SC5615
M13
TYP
7
1.4
12
145
0.8
0.8
0.9
2.7
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories
1
2
3
