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NE678M04-T2 Datasheet

  • NE678M04-T2

  • MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

  • 7頁

  • NEC   NEC

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MEDIUM POWER NPN SILICON
NE678M04
HIGH FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
HIGH GAIN BANDWIDTH:
f
T
= 12 GHz
HIGH OUTPUT POWER:
P
-1dB
= 18 dBm at 1.8 GHz
HIGH LINEAR GAIN:
G
L
= 13 dB at 1.8 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
+0.40
-0.05
2
+0.30
2.05鹵0.1
1.25鹵0.1
3
2.0鹵0.1
R55
1.25
0.65 0.65
0.65 0.65
DESCRIPTION
The NE678M04 is fabricated using NEC's HFT3 wafer pro-
cess. With a transition frequency of 12 GHz, the NE678M04 is
usable in applications from 100 MHz to 3 GHz. The NE678M04
provides P1dB of 18 dBm, even with low voltage and low
current, making this device an excellent choice for the driver
stage for mobile or fixed wireless applications.
The NE678M04 is housed in NEC's new low profile/flat lead
style "M04" package
1
+0.30
-0.05
(leads 1, 3 and ,4)
0.59鹵0.05
+0.11
-0.05
MAX
100
100
75
dBm
dB
dBm
dB
%
dB
GHz
pF
8.0
120
18.0
13.0
13.5
10.5
55
1.7
12.0
0.42
0.7
2.5
150
+0.1
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
NE678M04
M04
2SC5753
UNITS
nA
nA
MIN
TYP
+0.01
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
EIAJ
3
REGISTRATION NUMBER
SYMBOLS
I
CBO
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current
1
Gain at V
CE
= 3 V, I
C
= 30 mA
Output Power at 1 dB compression point at V
CE
= 2.8 V, I
CQ
= 10 mA,
f = 1.8 GHz, P
in
= 7 dBm
Linear Gain at V
CE
= 2.8 V, I
C
= 10 mA, f = 1.8 GHz, P
in
= -5 dBm
Maximum Available Gain
4
at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
Collector Efficiency at V
CE
= 2.8 V, I
CQ
= 10 mA, f = 1.8 GHz,
P
in
= 7 dBm
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz, Z
S
= Z
opt
Gain Bandwidth at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
Reverse Transfer
Capacitance
2
at V
CB
= 3 V, I
C
= 0, f = 1 MHz
DC
I
EBO
h
FE
P
1dB
G
L
RF
MAG
|S
21E
|
2
畏
c
NF
f
T
Cre
Notes:
1. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan.
4.
MAG = |S
21
|
|S
12
|
(
K 鹵
K
2
- 1
).
California Eastern Laboratories
4
1.30

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