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NE66719 Datasheet

  • NE66719

  • NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

  • 107.36KB

  • 8頁

  • CEL   CEL

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NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
HIGH GAIN BANDWIDTH:
f
T
= 21 GHz
LOW NOISE FIGURE:
NF = 1.1 dB at 2 GHz
HIGH MAXIMUM GAIN:
20 dB at f = 2 GHz
2
NE66719
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 19
1.6鹵0.1
0.8鹵0.1
1.6鹵0.1
0.2
-0
1.0
NEC's NE66719 is fabricated using NEC's UHS0 25 GHz f
T
wafer process. This device is ideal for oscillator or low noise
amplifier applications at 2 GHz and above.
0.5
3
1
0.75鹵0.05
0.6
0 to 0.1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain
2
at V
CE
= 2 V, I
C
= 5 mA
Gain Bandwidth at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Maximum Available Power Gain
4
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Maximum Stable
Gain
5
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
S
= Z
OPT
Third Order Intercept Point at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Feedback Capacitance
3
at V
CB
= 2 V, I
C
= 0, f = 1 MHz
pF
GHz
dB
dB
dB
dB
dB
9.0
9.5
UNITS
nA
nA
50
18
70
21
12.5
13.5
11.0
11.5
1.1
22
0.24
0.30
1.5
MIN
NE66719
2SC55667
19
TYP
MAX
100
100
100
DC
I
EBO
h
FE
f
T
MAG
MSG
|S
21e
|
2
|S
21e
|
2
NF
IP
3
Cre
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MAG = S
21
(
K- (K
2
-1)
)
S
12
5. MSG =
S
21
S
12
RF
California Eastern Laboratories
0.15
-0.05
+0.1
0.3
-0
+0.1
DESCRIPTION
0.5
+0.1
UB

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