鈥?/div>
Flat Lead Style for better RF performance
NE662M04
DESCRIPTION
The NE662M04 is fabricated using NEC's UHS0 25 GHz f
T
wafer process. With a typical transition frequency of 25 GHz
the NE662M04 is usable in applications from 100 MHz to 10
GHz. The NE662M04 provides excellent low voltage/low cur-
rent performance.
NEC's new low profile/flat lead style "M04" package is ideal for
today's portable wireless applications. The NE662M04 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
M04
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain
2
at V
CE
= 2 V, I
C
= 5 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
Maximum Available Power Gain
4
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Maximum Stable Gain
5
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
IN
= Z
OPT
Output Power at 1 dB compression point at
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Third Order Intercept Point at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Feedback Capacitance
3
at V
CB
= 2 V, I
C
= 0, f = 1 MHz
pF
GHz
dB
dB
dB
dB
dBm
14
UNITS
nA
nA
50
20
70
25
20
20
17
1.1
11
22
0.18
0.24
1.5
MIN
NE662M04
2SC5508
M04
TYP
MAX
200
200
100
DC
I
EBO
h
FE
f
T
MAG
MSG
|S
21E
|
2
NF
P
1dB
IP
3
Cre
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MAG = S
21
(
K- (K
2
-1)
)
S
12
5. MSG =
S
21
S
12
RF
California Eastern Laboratories
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