PRELIMINARY DATA SHEET
GaAs MES FET
NE6501077
10 W L, S-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NE6501077 is power GaAs FET which provides
high gain, high efficiency and high output power in L, S
band.
To reduce thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
PACKAGE DIMENSIONS (UNIT: mm)
17.5 鹵0.5
14.3
1.0 鹵0.1
GATE
SOURCE
FEATURES
鈥?Class A operation
鈥?High output power: 39.5 dBm (typ)
鈥?High gain: 10.5 dB (typ)
鈥?High power added efficiency: 40 % (typ)
鈥?Hermetically sealed ceramic package
2.26 鹵0.4
0.2 MAX.
1.0
0.1
鈥?.02
+0.06
2.5
R1.25, 2 PLACES
DRAIN
8.9 鹵0.4
6.35 鹵0.4
4.0 MIN BOTH
LEADS
3.8 MAX.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Temperature Cycling
* T
C
= 25 藲C
Caution Please handle this device at a static-free workstation, because this is an electrostatic sensitive
device.
V
DSX
V
GDX
V
GSX
I
D
I
G
P
T
(*)
T
ch
T
stg
T鈭?/div>
15
鈥?8
鈥?2
9.0
50
50
175
鈥?5 to +175
鈥?0 to +120
V
V
V
A
mA
W
藲C
藲C
藲C
Document No. P10978EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
漏
1996
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