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NE650103M Datasheet

  • NE650103M

  • NECS 10 W L & S-BAND POWER GaAs MESFET

  • 6頁

  • ETC

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NEC'
S
10 W L & S-BAND
NE650103M
POWER GaAs MESFET
FEATURES
鈥?LOW COST PLASTIC PACKAGE
鈥?USABLE TO 2.7 GHz:
PCS, W-CDMA, WLL, Satellite Uplink, BWA
鈥?HIGH OUTPUT POWER:
40 dBm TYP
鈥?HIGH POWER ADDED EFFICIENCY:
45 % TYP at 2.3 GHz
鈥?LOW THERMAL RESISTANCE:
4.0擄 C/W
鈥?LEAD-FREE
GATE
2-蠁 3.3 鹵 0.3
13.8 鹵 0.35
4.2 鹵 0.4
5.84 鹵 0.2
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 3M
20.32 鹵 0.15
14.27 鹵 0.15
3.5 鹵 0.2
DESCRIPTION
NEC's NE650103M is a 10 W GaAs MESFET designed for
PCS, W-CDMA, WLL transmitter applications. It is capable of
delivering 10 Watts of output power with high linear gain, high
efficiency and excellent linearity. Reliability and performance
uniformity are assured by NEC's stringent quality and control
procedures
DRAIN
8.54 鹵 0.2
2.04 鹵 0.3
0.15 鹵 0.05
SOURCE
ELECTRICAL CHARACTERISTICS
(T
C
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
P
1dB
G
L
CHARACTERISTICS
Power Out at 1dB Gain Compression
Linear Gain (at Pin
鈮?/div>
23 dBm)
Power Added Efficiency
Saturated Drain Current
Pinch-Off Voltage
Thermal Resistance
= 25擄C)
NE650103M
3M
UNITS
dBm
dB
%
A
V
擄C/W
2.0
-4.0
MIN
39.0
10.0
TYP
40.0
11.0
45
5.0
-2.5
4.0
7.0
-1.0
4.5
V
DS
= 2.5 V; V
GS
= 0 V
V
DS
= 2.5 V; I
DS
= 23 mA
Channel to Case
f = 2.3 GHz, V
DS
= 10.0 V
Rg = 100
鈩?/div>
I
DSQ
鈮?/div>
1.5 A (RF OFF)
MAX
TEST CONDITIONS
Functional
Characteristics
畏
ADD
I
DSS
V
P
R
TH
Electrical DC
Characteristics
California Eastern Laboratories
1.8 鹵 0.3

NE650103M 產(chǎn)品屬性

  • NEC

  • MESFET

  • 2.3 GHz

  • 11 dB

  • 15 V

  • - 18 V

  • 7 A

  • + 175 C

  • 33 W

  • SMD/SMT

  • 3M

  • 40 dBm

  • 10

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