PRELIMINARY DATA SHEET
GaAs MES FET
NE6500496
4 W L, S-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NE6500496 is power GaAs FET which provides high
gain, high efficiency and high output power in L, S band.
To reduce thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
PACKAGE DIMENSION (UNIT: mm)
1.0 鹵 0.1
4.0 MIN BOTHLEADS
SOURCE
GATE
蠁
2.2 鹵0.3
2 SLACES
4.0
FEATURES
鈥?Class A operation
鈥?High output power: 36 dBm (typ)
鈥?High gain: 11.5 dB (typ)
鈥?High power added efficiency: 45 % (typ)
鈥?Hermetically sealed ceramic package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Temperature Cycling
V
DSX
V
GDX
V
GSX
I
D
I
G
P
T
(*)
T
ch
T
stg
T鈭?/div>
15
鈥?8
鈥?2
4.5
25
25
175
鈥?5 to +175
鈥?0 to +120
*
T
C
= 25 藲C
Caution
V
V
V
A
mA
W
藲C
藲C
藲C
4.3 鹵0.2
DRAIN
0.6 鹵0.1
5.2 鹵0.3
11.0 鹵0.3
15.0 鹵0.3
0.1
0.2 MAX.
1.7 鹵0.15
6.0 鹵0.2
5.0 MAX.
1.2
Please handle this device at a static-free workstation, because this is an electrostatic sensitive
device.
Document No. P10971EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
漏
1996
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