L&S BAND MEDIUM POWER GaAs MESFET NE6500496
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25
擄C
unless otherwise noted)
SYMBOLS
V
DSX
V
GDX
V
GSX
I
DS
I
GS
P
T
T
CH
T
STG
PARAMETERS
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
UNITS
V
V
V
A
mA
W
擄C
擄C
RATINGS
15
-18
-12
4.5
25
25
175
-65 to +175
FEATURES
鈥?HIGH OUTPUT POWER:
4 W
鈥?HIGH LINEAR GAIN:
11.5 dB
鈥?HIGH EFFICIENCY (PAE):
45%
鈥?INDUSTRY STANDARD PACKAGING
DESCRIPTION
The NE6500496 is a medium power GaAs MESFET designed
for up to a 4 W output stage or as a driver for high power
devices. The device has no internal matching and can be used
from UHF frequencies up to 3.0 GHz. The chips used in this
series offer superior reliability and consistent performance for
which NEC microwave semiconductors are known.
The NE6500496 Transistors are manufactured to NEC's strin-
gent quality assurance standards to ensure highest reliability
and consistent superior performance.
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 96
5.2鹵0.3
1.0鹵0.1
4.0 MIN BOTH LEADS
Gate
蠁2.2鹵0.2
4.3鹵0.2
RECOMMENDED OPERATING LIMITS
SYMBOLS
V
DS
T
CH
G
COMP
R
G
PARAMETERS
Drain to Source Voltage
Channel Temperature
Gain Compression
Gate Resistance
UNITS MIN
V
擄C
dB
鈩?/div>
TYP MAX
10
10
130
3.0
200
+.06
0.1 -.02
0.2 MAX
1.7鹵0.15
6.0鹵0.2
1.2
0.6鹵0.1
5.2鹵0.3
11.0鹵0.15
15.0鹵0.3
Source
Drain
4.0鹵0.1
5.0 MAX
ELECTRICAL CHARACTERISTICS
(T
C
PART NUMBER
SYMBOLS
CHARACTERISTICS
Power Out at Fixed Input Power
Linear Gain
Power Added Efficiency
Drain Source Current
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
= 25擄C)
NE6500496
UNITS
dBm
dB
%
A
A
V
mS
擄C/W
1.0
-3.5
MIN
35.5
11.0
TYP
36.0
11.5
45
0.8
2.3
-2.0
1300
5.0
6.0
3.5
-0.5
V
DS
= 2.5 V; V
GS
= 0 V
V
DS
= 2.5 V; I
DS
= 15 mA
V
DS
= 2.5 V; I
DS
= 1 mA
Channel to Case
MAX
TEST CONDITIONS
P
IN
= 26.0 dBm
V
DS
= 10 V; I
DSQ
= 400 mA
f = 2.3 GHz; R
G
= 200
鈩?/div>
Functional
Characteristics
P
OUT
G
L
畏
ADD
I
DS
Electrical DC
Characteristics
I
DSS
V
P
g
m
R
TH
California Eastern Laboratories
1
2
