PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE6500179A
1 W L-BAND POWER GaAs MES FET
DESCRIPTION
The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile
communication handset and base station systems. It is capable of delivering 1 W of output power (CW) with high
linear gain, high efficiency and excellent distortion.
Reliability and performance uniformity are assured by NEC鈥檚 stringent quality and control procedures.
FEATURES
鈥?High output power: P
O (1 dB)
= 30.0 dBm TYP.
鈥?High linear gain: G
L
= 12.0 dB TYP.
鈥?High power added efficiency:
畏
add
= 50 % TYP. @ V
DS
= 6.0 V, I
Dset
= 200 mA, f = 1.9 GHz
ORDERING INFORMATION
Part Number
NE6500179A-T1
Package
79A
Supplying Form
鈥?12 mm wide embossed taping
鈥?Qty 1 kpcs/reel
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE6500179A
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10021EJ01V0DS (1st edition)
(Previous No. P15107EJ1V0DS00)
Date Published November 2001 CP(K)
Printed in Japan
The mark
!
shows major revised points.
錚?/div>
NEC Corporation 1999
錚?/div>
NEC Compound Semiconductor Devices 2001
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