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NE64700 Datasheet

  • NE64700

  • NPN SILICON MICROWAVE TRANSISTOR

  • 21.81KB

  • 1頁

  • ASI

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NE64700
NPN SILICON MICROWAVE TRANSISTOR
DESCRIPTION:
The
ASI NE64700
is a bipolar
transistor Designed for low noise
applications at VHF, UFH and
microwave frequencies up to 12 GHz.
CHIP
PACKAGE STYLE: CHIP
FEATURES:
鈥?/div>
P
G
= 18.1 dB Typical @ 1.0 GHz
鈥?/div>
NF
= 1.6 dB Typical @ 1.0 GHz
EMITTER
MAXIMUM RATINGS
I
C
V
CEO
V
CBO
V
EBO
T
J
T
STG
20 mA
7.0 V
9.0 V
1.5 V
-65 擄C to +200 擄C
-65 擄C to +150 擄C
5
5
B
0.0007 Inch Gold Wire
14
2
錚?/div>
BASE
Chip Dimension: (250 x 250) x 125 碌m
Bond Pad:
Die Attach:
50 x 50 碌m
Gold Eutectic
CHARACTERISTICS
SYMBOL
I
CBO
I
EBO
h
FE
C
CB
NF
P
G
P
1dB
f
t
V
CB
= 8.0 V
V
EB
= 1.0 V
V
CE
= 8.0 V
V
CB
= 8.0 V
V
CE
= 8.0 V
V
CE
= 8.0 V
I
C
= 10 mA
V
CE
= 8.0 V
錚?/div>
錚?/div>
S21錚?/div>
2
T
C
= 25 擄C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
0.2
1.0
UNITS
碌A(chǔ)
碌A(chǔ)
---
pF
dB
dB
dBm
GHz
I
C
= 10 mA
f = 1.0 MHz
I
C
= 2.0 mA
I
C
= 10 mA
f = 1.0 MHz
f = 1.0 GHz
50
100
0.11
1.6
15
12
12
7.5
18.1
12.8
12.6
250
I
C
= 10 mA
I
C
= 20 mA
I
C
= 10 mA
I
C
= 20 mA
f = 1.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 2.0 GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
鈥?/div>
NORTH HOLLYWOOD, CA 91605
鈥?/div>
(818) 982-1200
鈥?/div>
FAX (818) 765-3004
Specifications are subject to change without notice.
EMITTER
0.0007 Inch
Gold Wire
dB
REV. A
1/1

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