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NE425S01_98 Datasheet

  • NE425S01_98

  • NEC [C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FE...

  • 51.24KB

  • NEC   NEC

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PRELIMINARY DATA SHEET
C to KU BAND SUPER LOW
NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
鈥?SUPER LOW NOISE FIGURE:
0.60 dB TYP at 12 GHz
Noise Figure, NF (dB)
NE425S01
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
24
V
DS
= 2 V
I
D
= 10 mA
鈥?GATE LENGTH:
鈮?/div>
0.20
碌m
鈥?GATE WIDTH:
200
碌m
鈥?LOW COST PLASTIC PACKAGE
Ga
16
1.0
12
DESCRIPTION
The NE425S01 is a Hetero-Junction FET that utilizes the hetero
junction to create high mobility electrons. Its excellent low noise
and high associated gain make it suitable for DBS and other
commercial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
0.5
NF
0
1
2
4
6
8
10
14
20
8
4
30
Frequency, f (GHz)
RECOMMENDED
OPERATING CONDITIONS
(T
A
= 25擄C)
SYMBOLS
V
DS
I
D
P
in
CHARACTERISTICS
Drain to Source Voltage
Drain Current
Input Power
UNITS MIN TYP MAX
V
mA
dBm
2
10
3
20
0
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
NE425S01
S01
UNITS
dB
dB
mS
mA
V
碌A(chǔ)
10.5
45
20
-0.2
MIN
TYP
0.60
12.0
60
60
-0.7
0.5
90
-2.0
10
MAX
0.80
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
1
G
A1
g
m
I
DSS
V
GS(off)
I
GSO
PARAMETERS AND CONDITIONS
Noise Figure, V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
Associated Gain, V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
Transconductance, V
DS
= 2 V, I
D
= 10 mA
Saturated Drain Current, V
DS
= 2 V, V
GS
= 0 V
Gate to Source Cutoff Voltage, V
DS
= 2 V, I
D
= 100
碌A(chǔ)
Gate to Source Leak Current, V
GS
= -3 V
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories
Associated Gain, G
A
(dB)
鈥?HIGH ASSOCIATED GAIN:
12.0 dB TYP at f = 12 GHz
20

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