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NE4210M01 Datasheet

  • NE4210M01

  • C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

  • 80.46KB

  • 12頁

  • NEC   NEC

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PRELIMINARY DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
Super Low Noise Figure & High Associated Gain
NF = 0.8 dB TYP., G
a
= 11 dB TYP. at f = 12 GHz
6pin super minimold package
Gate Width: Wg = 200
碌
m
ORDERING INFORMATION
Part Number
NE4210M01-T1
Package
6-pin super minimold
Supplying Form
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation
side of the tape
V73
Marking
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
Ratings
4.0
鈭?.0
I
DSS
100
125
125
鈭?5
to +125
Unit
V
V
mA
碌
A
mW
擄C
擄C
The information in this document is subject to change without notice.
Document No. P13682EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
漏
1998

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