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NE38018_00 Datasheet

  • NE38018_00

  • GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Pac...

  • 9頁(yè)

  • NEC   NEC

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GaAs HJ-FET
L TO S BAND LOW NOISE AMPLIFIER
(New Plastic Package)
FEATURES
鈥?LOW COST MINIATURE PLASTIC PACKAGE
(SOT-343)
Noise Figure, NF (dB)
4
NE38018
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
CE
= 2 V, I
D
= 5 mA
25
20
G
A
3
15
10
鈥?HIGH ASSOCIATED GAIN:
14.5 dB typical at 2 GHz
鈥?L
G
= 0.6
碌m,
W
G
= 800
碌m
鈥?TAPE & REEL PACKAGING
2
5
0
DESCRIPTION
The NE38018 is a low cost gallium arsenide Hetero-Junction
FET housed in a miniature (SOT-343) plastic surface mount
package. The device is fabricated using ion implantation for
improved RF and DC performance, reliability, and uniformity.
Its low noise figure, high gain, small size and weight make it
an ideal low noise medium power amplifier transistor in the 1-
3 GHz frequency range. The NE38018 is suitable for GPS,
PCS, WLAN, MMDS, and other commercial applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
1
NF
0
0.5
1
2
3
4
5 6 7 8 910
Frequency, f (GHz)
18 Package
SOT-343 Style
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOL
NF
1
G
A1
P
1dB
PARAMETERS AND CONDITIONS
Noise Figure at V
DS
= 2 V, I
D
= 5 mA, f = 2 GHz
Associated Gain at V
DS
= 2 V, I
D
= 5 mA, f = 2 GHz
Output Power at 1 dB Gain Compression Point, f = 2 GHz
V
DS
= 2 V, I
DS
= 15 mA
V
DS
= 3 V, I
DS
= 30 mA
Gain at P
1dB
, f = 2 GHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 3 V, I
DS
= 20 mA
V
DS
= 2 V, I
DS
= 5 mA, f = 2 GHz
Output I
P3
at f = 2 GHz,
鈭唂
= 1 MHz, V
DS
= 3 V, I
DS
= 5 mA
Saturated Drain Current at V
DS
= 2 V, V
GS
= 0 V
Pinch Off Voltage at V
DS
= 2 V, I
D
= 100
碌A(chǔ)
Transconductance at V
DS
= 2 V, I
D
= 5 mA
Gate to Source Leakage Current at V
GS
= -3 V
Thermal Resistance (Channel to Ambient)
dBm
dBm
mA
V
mS
碌A(chǔ)
藲C/W
40
-0.1
50
UNITS
dB
dB
dBm
dBm
12.5
MIN
NE38018
18
TYP
0.55
14.5
12
17 (V67)
18 (V68)
16.0
16.5
16.5
22 (V67)
23 (V68)
100
-0.8
80
1
833
20
170
-1.5
MAX
1.0
G
1dB
dB
dB
MAG
O/P I
P3
I
DSS
V
P
g
m
I
GSO
R
TH(CH-A)
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production
line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.
California Eastern Laboratories
Associated Gain, G
A
(dB)
鈥?LOW NOISE FIGURE:
0.55 dB typical at 2 GHz

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