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HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3509M04

L TO S BAND LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

鈥?Super low noise figure and high associated gain

NF = 0.4 dB TYP., G

a

= 17.5 dB TYP. @ f = 2 GHz, V

DS

= 2 V, I

D

= 10 mA

鈥?Flat-lead 4-pin thin-type super minimold (M04) package

APPLICATIONS

鈥?Satellite radio (SDARS, DMB, etc.) antenna LNA

鈥?GPS antenna LNA

鈥?Low noise amplifier for microwave communication system

ORDERING INFORMATION

Part Number

NE3509M04

NE3509M04-T2

Order Number

NE3509M04-A

NE3509M04-T2-A

Package

Flat-lead 4-pin thin-

type super minimold

(M04) (Pb-Free)

Quantity

50 pcs (Non reel)

3 kpcs/reel

Marking

V80

Supplying Form

鈥?8 mm wide embossed taping

鈥?Pin 1 (Source), Pin 2 (Drain) face

the perforation side of the tape

Remark

To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3509M04

ABSOLUTE MAXIMUM RATINGS (T

A

= +25擄C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

Symbol

V

DS

V

GS

I

D

I

G

P

tot

Note

Ratings

4.0

鈭?.0

I

DSS

200

150

+150

鈭?5

to +150

Unit

V

V

mA

碌

A

mW

擄C

擄C

T

ch

T

stg

Note

Mounted on 1.08 cm

2

脳

1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PG10608EJ01V0DS (1st edition)

Date Published April 2006 NS CP(K)

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