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NE34018-A Datasheet

  • NE34018-A

  • California Eastern Labs [GaAs HJ-FET L TO S BAND LOW NOISE ...

  • CEL   CEL

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GaAs HJ-FET L TO S BAND
LOW NOISE AMPLIFIER
(New Plastic Package)
FEATURES
鈥?LOW COST MINIATURE PLASTIC PACKAGE
(SOT-343)
鈥?LOW NOISE FIGURE:
0.6 dB typical at 2 GHz
鈥?HIGH ASSOCIATED GAIN:
16.0 dB typical at 2 GHz
鈥?L
G
= 0.6
碌
m, W
G
= 400
碌
m
鈥?TAPE & REEL PACKAGING
4
NE34018
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 3 V, I
DS
= 20 mA
25
20
Noise Figure, NF (dB)
3
15
10
2
5
0
DESCRIPTION
NEC's NE34018 is a low cost gallium arsenide Hetero-Junc-
tion FET housed in a miniature (SOT-343) plastic surface
mount package. The device is fabricated using ion implanta-
tion for improved RF and DC performance, reliability, and
uniformity. Its low noise figure, high gain, small size and
weight make it an ideal low noise amplifier transistor in the 1-
3 GHz frequency range. The NE34018 is suitable for GPS,
PCS, WLAN, MMDS, and other commercial applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
1
NF
0
0.5
1
2
3
4
5 6 7 8 910
Frequency, f (GHz)
18 Package
SOT-343 Style
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOL
NF
G
A
P
1dB
PARAMETERS AND CONDITIONS
Noise Figure at V
DS
= 2 V, I
D
= 5 mA, f = 2 GHz
Associated Gain at V
DS
= 2 V, I
D
= 5 mA, f = 2 GHz
Output Power at 1 dB Gain Compression Point, f = 2 GHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 3 V, I
DS
= 30 mA
Gain at P
1dB
, f = 2 GHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 3 V, I
DS
= 30 mA
Output I
P3
at f = 2 GHz,
鈭唂
= 1 MHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 30 mA
Saturated Drain Current at V
DS
= 2 V, V
GS
= 0 V
Pinch Off Voltage at V
DS
= 2 V, I
D
= 100
碌A(chǔ)
Transconductance at V
DS
= 2 V, I
D
= 5 mA
Gate to Source Leakage Current at V
GS
= -3 V
Thermal Resistance (Channel to Ambient)
UNITS
dB
dB
dBm
dBm
dB
dB
dBm
dBm
mA
V
mS
碌A(chǔ)
藲C/W
30
-2.0
30
0.5
833
10
14.0
MIN
NE34018
18
TYP
0.6
16.0
12
16.5
17.0
17.5
23
32
80
-0.8
120
-0.2
MAX
1.0
G
1dB
O/P I
P3
I
DSS
V
P
g
m
I
GSO
R
TH(CH-A)
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production
line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.
California Eastern Laboratories
Associated Gain, G
A
(dB)
G
A

NE34018-A 產(chǎn)品屬性

  • 1

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • HFET

  • 2GHz

  • 16dB

  • 2V

  • 120mA

  • 0.6dB

  • 5mA

  • 12dBm

  • 4V

  • SC-82A，SOT-343

  • SOT-343

  • 散裝

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