PRELIMINARY DATA SHEET
C BAND SUPER LOW NOISE HJ FET
FEATURES
鈥?VERY LOW NOISE FIGURE:
0.25 dB TYP at 4 GHz
Maximum Stable Gain, MSG. (dB)
Maximum Available Gain, MAG. (dB)
Forward Insertion Gain, |S
21S
|
2
(dB)
NE334S01
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
V
DS
= 2 V
I
D
= 10 mA
20
MSG.
鈥?HIGH ASSOCIATED GAIN:
16.0 dB TYP at 4 GHz
鈥?GATE WIDTH:
280
碌m
鈥?TAPE & REEL PACKAGING OPTION AVAILABLE
鈥?LOW COST PLASTIC PACKAGE
16
|S
21S
|
2
12
MAG.
8
DESCRIPTION
The NE334S01 is a Hetero-Junction FET that uses the junction
between Si-doped AlGaAs and undoped InGaAs to create very
high mobility electrons. Its excellent low noise and high asso-
ciated gain make it suitable for TVRO and other commercial
systems.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
4
1
2
4
6
8 10
14
20
30
Frequency, f (GHz)
RECOMMENDED
OPERATING CONDITION
SYMBOLS
V
DS
I
D
P
IN
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
(T
A
= 25擄C)
UNITS MIN TYP MAX
V
mA
dBm
2
15
2.5
20
0
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
NE334S01
S01
UNITS
dB
dB
mA
mS
V
碌A(chǔ)
15.0
20
70
-0.2
MIN
TYP
0.25
16.0
80
85
-0.9
0.5
-2.5
10
150
MAX
0.35
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
1
G
A1
I
DSS
g
m
V
GS(off)
I
GSO
PARAMETERS AND CONDITIONS
Noise Figure, V
DS
= 2.0 V, I
D
= 15 mA, f = 4 GHz
Associated Gain, V
DS
= 2.0 V, I
D
= 15 mA, f = 4 GHz
Saturated Drain Current, V
DS
= 2.0 V, V
GS
= 0 V
Transconductance, V
DS
= 2.0 V, I
D
= 14 mA
Gate to Source Cutoff Voltage, V
DS
= 2.0 V, I
D
= 100
碌A(chǔ),
Gate to Source Leak Current, V
GS
= -3.0 V
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production
line as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories
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2
3
4
5
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