SUPER LOW NOISE HJ FET
NE33284A
FEATURES
鈥?VERY LOW NOISE FIGURE:
0.8 dB typical at 12 GHz
鈥?HIGH ASSOCIATED GAIN:
10.5 dB Typical at 12 GHz
Noise Figure, NF (dB)
1.4
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 2 V, I
DS
= 10 mA
24
1.2
G
A
1
21
鈥?GATE LENGTH:
0.3
碌m
鈥?GATE WIDTH:
280
碌m
鈥?LOW COST METAL/CERAMIC PACKAGE
鈥?TAPE & REEL PACKAGING OPTION AVAILABLE
18
0.8
15
0.6
12
0.4
NF
0.2
9
DESCRIPTION
The NE33284A is a Hetero-Junction FET that uses the junction
between Si-doped AlGaAs and undoped InGaAs to create very
high mobility electrons. The device features mushroom shaped
TiAl gates for decreased gate resistance and improved power
handling capabilities. The mushroom gate also results in lower
noise figure and high associated gain. This device is housed in
an epoxy-sealed, metal/ceramic package and is intended for
high volume consumer and industrial applications.
6
0
1
10
20
3
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
OPT
1
G
A
1
P
1dB
PARAMETERS AND CONDITIONS
Optimum Noise Figure, V
DS
= 2.0 V, I
DS
= 10 mA, f = 12 GHz
f = 4 GHz
Associated Gain, V
DS
= 2.0 V, I
DS
= 10 mA, f = 12 GHz
f = 4 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz
V
DS
= 2.0 V, I
DS
= 10 mA
V
DS
= 2.0 V, I
DS
= 20 mA
Gain at P
1dB
, f = 12 GHz
V
DS
= 2.0 V, I
DS
= 10 mA
V
DS
= 2.0 V, I
DS
= 20 mA
Saturated Drain Current, V
DS
= 2.0 V,V
GS
= 0 V
Pinch-off Voltage, V
DS
= 2.0 V, I
DS
= 0.1 mA
Transconductance, V
DS
= 2.0 V, I
D
= 10 mA
Gate to Source Leakage Current, V
GS
= -3.0 V
Thermal Resistance (Channel to Ambient)
Thermal Resistance (Channel to Case)
UNITS
dB
dB
dB
dB
dBm
dBm
dB
dB
mA
V
mS
碌A(chǔ)
擄C/W
擄C/W
15
-2.0
45
9.5
13.0
MIN
NE33284A
84AS
TYP
0.75
0.35
10.5
15.0
11.2
12.0
10.8
11.0
40
-0.8
70
0.5
630
280
310
10.0
80
-0.2
MAX
1.0
0.45
G
1dB
I
DSS
V
P
g
m
I
GSO
R
TH (CH-A)
R
TH (CH-C)2
Notes:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not for each specimen.
2. R
TH
(channel to case) for package mounted on an infinite heat sink.
California Eastern Laboratories
Associated Gain, G
A
(dB)
1
2
3
4
5
