NONLINEAR MODEL
SCHEMATIC
Q1
Lgx
GATE
0.35nH
NE32900
Ldx
DRAIN
0.28nH
Lsx
0.025nH
SOURCE
FET NONLINEAR MODEL PARAMETERS
(1)
Parameters
VTO
VTOSC
ALPHA
BETA
GAMMA
GAMMADC
Q
DELTA
VBI
IS
N
RIS
RID
TAU
CDS
RDB
CBS
CGSO
CGDO
DELTA1
DELTA2
FC
VBR
Q1
-0.825
0
7
0.148
0.081
0.05
2.5
0.7
0.6
1e-14
1
0
0
3e-12
0.095e-12
5000
1e-9
0.42e-12
0.023e-12
0.3
0.6
0.5
Infinity
Parameters
RG
RD
RS
RGMET
KF
AF
TNOM
XTI
EG
VTOTC
BETATCE
FFE
Q1
7
4
4
0
0
1
27
3
1.43
0
0
1
UNITS
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
MODEL RANGE
Frequency: 0.5 to 26.5 GHz
Bias:
V
DS
= 1 V to 3 V, I
D
= 5 mA to 25 mA
I
DSS
= 54.3 mA @ V
GS
= 0, V
DS
= 2 V
Date:
1/98
(1) Series IV Libra TOM Model
California Eastern Laboratories
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
鈥?Headquarters 鈥?4590 Patrick Henry Drive 鈥?Santa Clara, CA 95054-1817 鈥?(408) 988-3500 鈥?Telex 34-6393 鈥?FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) 鈥?Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -8/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
1
