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NE325S01_02 Datasheet

  • NE325S01_02

  • C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

  • 5頁(yè)

  • NEC   NEC

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C to KU BAND SUPER LOW
NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
鈥?SUPER LOW NOISE FIGURE:
0.45 dB TYP at 12 GHz
Noise Figure, NF (dB)
NE325S01
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
24
V
DS
= 2 V
I
D
= 10 mA
鈥?GATE LENGTH:
鈮?/div>
0.20
碌m
鈥?GATE WIDTH:
200
碌m
鈥?LOW COST PLASTIC PACKAGE
Ga
16
1.0
12
0.5
8
DESCRIPTION
0
NF
1
2
4
6
8 10
14
20
4
30
The NE325S01 is a Hetero-Junction FET that uses the junction
between Si-doped AlGaAs and undoped InGaAs to create very
high mobility electrons. Its excellent low noise figure and high
associated gain make it suitable for commercial systems and
industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
Frequency, f (GHz)
RECOMMENDED
OPERATING CONDITIONS
(T
A
= 25擄C)
SYMBOLS
V
DS
I
D
P
in
CHARACTERISTICS
Drain to Source Voltage
Drain Current
Input Power
UNITS MIN TYP MAX
V
mA
dBm
2
10
3
20
0
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
NE325S01
S01
UNITS
dB
dB
mA
mS
V
碌A(chǔ)
11.0
20
45
-0.2
MIN
TYP
0.45
12.5
60
60
-0.7
0.5
-2.0
10
90
MAX
0.55
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
1
G
A1
I
DSS
g
m
V
GS(off)
I
GSO
PARAMETERS AND CONDITIONS
Noise Figure, V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
Associated Gain, V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
Saturated Drain Current, V
DS
= 2 V, V
GS
= 0 V
Transconductance, V
DS
= 2 V, I
D
= 10 mA
Gate to Source Cutoff Voltage, V
DS
= 2 V,I
D
= 100
碌A(chǔ)
Gate to Source Leak Current, V
GS
= -3 V
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories
Associated Gain, G
A
(dB)
鈥?HIGH ASSOCIATED GAIN:
12.5 dB TYP at 12 GHz
20

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