ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET
FEATURES
鈥?VERY LOW NOISE FIGURE:
0.6 dB typical at 12 GHz
鈥?HIGH ASSOCIATED GAIN:
11 dB typical at 12 GHz
Noise Figure, NF (dB)
1.4
1.2
G
A
1
0.8
0.6
0.4
0.2
NE32484A
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 2 V, I
DS
= 10 mA
24
21
鈥?L
G
= 0.25
碌m,
W
G
= 200
碌m
鈥?LOW COST METAL/CERAMIC PACKAGE
鈥?TAPE & REEL PACKAGING OPTION AVAILABLE
18
15
NF
DESCRIPTION
The NE32484A is a pseudomorphic Hetero-Junction FET that
uses the junction between Si-doped AlGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling capabilities. The
mushroom gate also results in lower noise figure and high
associated gain. This device is housed in an epoxy-sealed,
metal/ceramic package and is intended for high volume
consumer and industrial applications.
NEC's stringent quality assurance and test procedures as-
sure the highest reliability and performance.
12
9
6
3
0
1
10
20
30
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
OPT
1
G
A
1
P
1dB
PARAMETERS AND CONDITIONS
Noise Figure, V
DS
= 2.0 V, I
D
= 10 mA,
f = 12 GHz
Associated Gain, V
DS
= 2.0 V, I
D
= 10 mA, f = 12 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz
V
DS
= 2.0 V, I
DS
= 10 mA
V
DS
= 2.0 V, I
DS
= 20 mA
Gain at P
1dB
, f = 12 GHz
V
DS
= 2.0 V, I
DS
= 10 mA
V
DS
= 2.0 V, I
DS
= 20 mA
Saturated Drain Current, V
DS
= 2.0 V, V
GS
= 0 V
Pinch-off Voltage, V
DS
= 2.0 V, I
DS
= 0.1 mA
Transconductance, V
DS
= 2.0 V, I
D
= 10 mA
Gate to Source Leakage Current, V
GS
= -3.0 V, I
D
= 0 mA
Thermal Resistance (Channel to Ambient)
Thermal Resistance (Channel to Case)
UNITS
dB
dB
dBm
dBm
dB
dB
mA
V
mS
碌A(chǔ)
擄C/W
擄C/W
15
-2.0
45
10.0
MIN
NE32484A
84AS
TYP
0.6
11.0
8.5
11.0
10.0
10.5
40
-0.8
60
0.5
750
350
10.0
70
-0.2
MAX
0.7
G
1dB
I
DSS
V
P
g
m
I
GSO
R
TH (CH-A)
R
TH (CH-C)
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not for each specimen.
California Eastern Laboratories
Associated Gain, G
A
(dB)
1
2
3
4
5
