ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET
FEATURES
鈥?VERY LOW NOISE FIGURE:
NF = 0.6 dB typical at f = 12 GHz
鈥?HIGH ASSOCIATED GAIN:
G
A
= 11.0 dB typical at f = 12 GHz
鈥?L
G
= 0.25
碌m,
W
G
= 200
碌m
Noise Figure, NF (dB)
3
G
A
NE32400
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 2 V, I
DS
= 10 mA
24
2
18
DESCRIPTION
The NE32400 is a pseudomorphic Hetero-Junction FET chip
that utilizes the junction between Si-doped AlGaAs and undoped
InGaAs to create a two-dimensional electron gas layer with
very high electron mobility. This device features mushroom
shaped TiAl gates for decreased gate resistance and im-
proved power handling capabilities. The mushroom gate re-
sults in lower noise figure and high associated gain for con-
sumer and industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
1.5
15
1
12
0.5
NF
9
0
1
10
20
30
6
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
OPT1
PARAMETERS AND CONDITIONS
Optimum Noise Figure at V
DS
= 2 V, I
DS
= 10 mA
f = 4 GHz
f = 12 GHz
Associated Gain at V
DS
= 2 V, I
DS
= 10 mA
f = 4 GHz
f = 12 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 20 mA
Gain at P
1dB
, f = 12 GHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 20 mA
Saturated Drain Current at V
DS
= 2 V, V
GS
= 0 V
Pinch-Off Voltage at V
DS
= 2 V, I
DS
= 100
碌A(chǔ)
Transconductance at V
DS
= 2 V, I
DS
= 10 mA
Gate to Source Leakage Current at V
GS
= -3 V
Thermal Resistance (Channel-to-Case)
UNITS
dB
dB
dB
dB
dBm
dBm
dB
dB
mA
V
mS
碌A(chǔ)
擄C/W
15
-2.0
45
MIN
NE32400
00 (CHIP)
TYP
0.35
0.6
16.0
11.0
9.5
11.0
11.8
12.8
40
-0.8
60
0.5
10
260
70
-0.2
MAX
0.7
G
A1
10.0
P
1dB
G
1dB
I
DSS
V
P
g
m
I
GSO
R
TH (CH-C)2
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10
samples.
2. Chip mounted on infinite heat sink.
California Eastern Laboratories
Associated Gain, G
A
(dB)
2.5
21
1
2
3
4
5
