GENERAL PURPOSE
DUAL-GATE GaAs MESFET
FEATURES
鈥?SUITABLE FOR USE AS RF AMPLIFIER AND
MIXER IN UHF APPLICATIONS
鈥?LOW CRSS:
0.02 pF (TYP)
鈥?HIGH GPS:
20 dB (TYP) AT 900 MHz
鈥?LOW NF:
1.1 dB TYP AT 900 MHz
鈥?L
G1
= 1.0
碌m,
L
G2
= 1.5
碌m,
W
G
= 800
碌m
鈥?ION IMPLANTATION
鈥?AVAILABLE IN TAPE & REEL OR BULK
Power Gain, G
PS
(dB)
NE25339
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
V
GS
= 1 V, I
DS
= 10 mA, f = 900 MHz
20
G
PS
10
10
5
NF
0
0
0
5
10
DESCRIPTION
The NE253 is an 800
碌m
dual gate GaAs FET designed to
provide flexibility in its application as a mixer, AGC amplifier,
or low noise amplifier. As an example, by shorting the second
gate to the source, higher gain can be realized than with single
gate MESFETs. This device is available in a mini-mold (sur-
face mount) package.
Drain to Source Voltage, V
DS
(V)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOL
NF
G
PS
BV
DSX
I
DSS
V
G1S (OFF)
V
G2S (OFF)
I
G1SS
I
G2SS
|Y
FS
|
C
ISS
C
RSS
PARAMETERS AND CONDITIONS
Noise Figure at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Power Gain at V
DS
= 5 V, V
G2S
= 1 V, I
DS
= 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at V
G1S
= -4 V,
V
G2S
= 0, I
DS
= 20
碌A(chǔ)
Saturated Drain Current at V
DS
= 5 V, V
G2S
= 0 V, V
G1S
= 0 V
Gate 1 to Source Cutoff Voltage at V
DS
= 5 V,
V
G2S
= 0 V, I
D
= 100
碌A(chǔ)
Gate 2 to Source Cutoff Voltage at V
DS
= 5 V,
V
G1S
= 0 V, I
D
= 100
碌A(chǔ)
Gate 1 Reverse Current at V
DS
= 0, V
G1S
= -4V, V
G2S
= 0
Gate 2 Reverse Current at V
DS
= 0. V
G2S
= -4V, V
G1S
= 0
Forward Transfer Admittance at V
DS
= 5 V, V
G2S
= 1 V,
I
DS
= 10 mA, f = 1.0 kHz
Input Capacitance at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at V
DS
= 5 V, V
G2S
= 1 V,
I
DS
= 10 mA, f = 1 MHz
UNITS
dB
dB
V
mA
V
V
碌A(chǔ)
碌A(chǔ)
mS
pF
pF
25
1.0
35
1.5
0.02
2.0
0.035
16
10
10
40
80
-3.5
-3.5
10
10
MIN
NE25339
39
TYP
1.1
20
MAX
2.5
California Eastern Laboratories
Noise Figure, NF (dB)