鈥?/div>
GATE LENGTH:
0.25
碌m
鈥?GATE WIDTH:
200
碌m
鈥?HERMETIC METAL/CERAMIC PACKAGE
Optimum Noise Figure, NF
OPT
(dB)
1.4
1.2
G
A
1
0.8
0.6
0.4
0.2
NF
18
15
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 2 V, I
DS
= 10 mA
24
21
12
9
6
3
DESCRIPTION
The NE24283B is a pseudomorphic Hetero-Junction FET that
uses the junction between Si-doped AlGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling capabilities. The
mushroom gate also results in lower noise figure and high
associated gain. This device is housed in a solder sealed
hermetic, metal ceramic package for high reliability in space
applications.
NEC's stringent quality assurance and test procedures as-
sure the highest reliability and performance.
0
1
10
20
30
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
OPT1
PARAMETERS AND CONDITIONS
Optimum Noise Figure at V
DS
= 2 V, I
DS
= 10 mA
f = 4 GHz
f = 12 GHz
Associated Gain at V
DS
= 2 V, I
DS
= 10 mA
f = 4 GHz
f = 12 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 20 mA
Gain at P
1dB
, f = 12 GHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 20 mA
Saturated Drain Current at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
DS
= 100
碌A(chǔ)
Transconductance at V
DS
= 2 V, I
DS
= 10 mA
Gate to Source Leakage Current at V
GS
= -3 V
Thermal Resistance (Channel-to-Ambient)
Thermal Resistance (Channel-to-Case)
UNITS
dB
dB
dB
dB
dBm
dBm
dB
dB
mA
V
mS
碌A(chǔ)
擄C/W
擄C/W
15
-2.0
45
MIN
NE24283B
83B
TYP
0.35
0.6
16.0
11.0
9.5
11.0
11.8
12.8
40
-0.8
60
0.5
750
350
10
70
-0.2
MAX
0.7
G
A1
10.0
P
1dB
G
1dB
I
DSS
V
P
g
m
I
GSO
R
TH (CH-A)
R
TH (CH-C)
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established of the production
line as a "go-no-go" screening tuned for the "generic" type but not for each specimen.
California Eastern Laboratories
Associated Gain, G
A
(dB)
NEC
1
2
3
4
