ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET
(SPACE QUALIFIED)
FEATURES
鈥?VERY LOW NOISE FIGURE:
NF = 0.6 dB typical at f = 12 GHz
Noise Figure, NF (dB)
3
G
A
NE24200
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 2 V, I
DS
= 10 mA
24
鈥?L
G
= 0.25
碌m,
W
G
= 200
碌m
2
18
1.5
15
DESCRIPTION
The NE24200 is a pseudomorphic Hetero-Junction FET chip
that utilizes the junction between Si-doped AlGaAs and
undoped InGaAs to create a two-dimensional electron gas
layer with very high electron mobility. This device features
mushroom shaped TiAl gates for decreased gate resistance
and improved power handling capabilities. The mushroom
gate results in lower noise figure and high associated gain for
space applications.
NEC's stringent quality assurance and test procedures as-
sure the highest reliability and performance.
1
12
0.5
NF
9
0
1
10
20
30
6
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
OPT1
PARAMETERS AND CONDITIONS
Optimum Noise Figure at V
DS
= 2 V, I
DS
= 10 mA
f = 4 GHz
f = 12 GHz
Associated Gain at V
DS
= 2 V, I
DS
= 10 mA
f = 4 GHz
f = 12 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 20 mA
Gain at P
1dB
, f = 12 GHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 20 mA
Saturated Drain Current at V
DS
= 2 V, V
GS
= 0 V
Pinch-Off Voltage at V
DS
= 2 V, I
DS
= 100
碌A(chǔ)
Transconductance at V
DS
= 2 V, I
DS
= 10 mA
Gate to Source Leakage Current at V
GS
= -3 V
Thermal Resistance (Channel-to-Case)
UNITS
dB
dB
dB
dB
dBm
dBm
dB
dB
mA
V
mS
碌A(chǔ)
擄C/W
15
-2.0
45
MIN
NE24200
00 (CHIP)
TYP
0.35
0.6
16.0
11.0
9.5
11.0
11.8
12.8
40
-0.8
60
0.5
10
260
70
-0.2
MAX
0.7
G
A1
10.0
P
1dB
G
1dB
I
DSS
V
P
g
m
I
GSO
R
TH(CH-C)2
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10
samples.
2. Chip mounted on infinite heat sink.
California Eastern Laboratories
Associated Gain, G
A
(dB)
鈥?HIGH ASSOCIATED GAIN:
G
A
= 11.0 dB typical at f = 12 GHz
2.5
21
NEC
1
2
3
4
