鈥?/div>
GATE WIDTH =
W
G
= 280
碌m
鈥?HERMETIC SEALED CERAMIC PACKAGE
鈥?HIGH RELIABILITY
1.88
鹵
0.3
2
4
0.5
鹵
0.1
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 83B
1.88
鹵
0.3
1
4.0 MIN (ALL LEADS)
3
DESCRIPTION
The NE23383B is a heterojunction FET that utilizes the
heterojunction to create high mobility electrons. The device
features mushroom shaped gate for decreased gate resis-
tance and improved power handling capabilities. The mush-
room gate structure also results in low noise figure and high
associated gain. The device is housed in a rugged hermeti-
cally sealed metal ceramic stripline package selected for
industrial and space applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
1.0
鹵
0.1
1.45 MAX
+0.07
0.1
-0.03
APPLICATION
鈥?BEST SUITED FOR LOW NOISE AMPS STAGE AT
C AND X BAND
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
G
A
I
DSS
V
GS(off)
g
M
I
GDO
I
GSO
PARAMETERS AND CONDITIONS
Noise Figure at V
DS
= 2 V, I
D
= 10 mA, f = 4 GHz
Associated Gain at V
DS
= 2 V, I
D
= 10 mA, f = 4 GHz
Saturated Drain Current at V
DS
= 2 V, V
GS
= 0 V
Gate to Source Cut off Voltage at V
DS
= 2 V, I
D
= 100
碌A(chǔ)
Transconductance at V
DS
= 2 V, I
D
= 10 mA
Gate to Drain Leakage Current at V
GD
= -3 V
Gate to Source Leakage Current at V
GS
= -3 V
UNITS
dB
dB
mA
V
ms
碌A(chǔ)
碌A(chǔ)
13.0
15
-0.2
45
MIN
NE23383B
TYP
0.35
15.0
40
-0.8
70
0.5
0.5
10
10
80
-2.0
MAX
0.45
California Eastern Laboratories