SUPER LOW NOISE HJ FET
(SPACE QUALIFIED)
FEATURES
鈥?VERY LOW NOISE FIGURE:
0.75 dB typical at 12 GHz
Optimum Noise Figure, NF
OPT
(dB)
NE23300
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 2 V, I
DS
= 10 mA
4.5
4.0
3.5
3.0
NF
2.5
2.0
1.5
1.0
0.5
0
1
10
40
16
14
12
10
8
6
G
A
22
20
18
鈥?HIGH ASSOCIATED GAIN:
10.5 dB Typical at 12 GHz
鈥?GATE LENGTH:
0.3
碌m
鈥?GATE WIDTH:
280
碌m
DESCRIPTION
The NE23300 is a Hetero-Junction FET chip that utilizes the
junction between Si-doped AlGaAs and undoped InGaAs to
create a two-dimensional electron gas layer with very high
electron mobility. Its excellent low noise figure and high asso-
ciated gain make it suitable for space applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
OPT
1
PARAMETERS AND CONDITIONS
Noise Figure, V
DS
= 2 V, I
D
= 10 mA,
f = 4 GHz
f = 12 GHz
Associated Gain, V
DS
= 2 V, I
D
= 10 mA,
f = 4 GHz
f = 12 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 20 mA
Gain at P
1dB
, f = 12 GHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 20 mA
Saturated Drain Current, V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage, V
DS
= 2 V, I
D
= 100
碌A
Transconductance, V
DS
= 2 V, I
D
= 10 mA
Gate to Source Leakage Current, V
GS
= -5 V
Thermal Resistance (Channel to Case)
UNITS
dB
dB
dB
dB
dBm
dBm
dB
dB
mA
V
mS
碌A
擄C/W
15
-2.0
45
MIN
NE23300
00 (Chip)
TYP
0.35
0.75
15.0
10.5
11.2
12.0
11.8
12.8
40
-0.8
70
0.5
10
260
80
-0.2
MAX
1.0
G
A
1
10.0
P
1dB
G
1dB
I
DSS
V
P
g
m
I
GSO
R
TH(CH-C)2
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for
10 samples.
2. Chip mounted on infinite heat sink.
California Eastern Laboratories
Associated Gain, G
A
(dB)
1
2
3
4
5
