鈥?/div>
LARGE DYNAMIC RANGE:
19 dBm at 1 dB,
2 GHz Gain Compression
DESCRIPTION
The NE021 series of NPN silicon transistors provides eco-
nomical solutions to wide ranges of amplifier and oscillator
problems. Low noise and high current capability provide low
intermodulation distortion. The NE021 series is available as a
chip or in several package styles. The series uses the NEC
gold, platinum, titanium, and platinum-silicide metallization
system to provide the utmost in reliability. NE02107 is avail-
able in both common-base and common-emitter configura-
tions and has been qualified for high-reliability space applica-
tions.
00 (CHIP)
07/07B
33 (SOT 23 STYLE)
35 (MICRO-X)
NE02135
TYPICAL NOISE PARAMETERS
(T
A
= 25擄C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
螕
OPT
MAG
ANG
Rn/50
V
CE
= 10 V, I
C
= 5 mA
500
1000
1500
2000
2500
3000
3500
500
1000
1500
2000
2500
3000
3500
1.2
1.5
2.0
2.4
2.6
3.6
3.7
1.8
1.9
2.4
2.9
3.2
3.9
4.3
18.60
13.82
11.83
9.36
7.82
7.51
6.31
21.32
16.15
13.50
11.02
9.12
8.10
6.48
.36
.31
.50
.44
.52
.68
.71
.16
.33
.46
.53
.57
.62
.67
69
124
165
-175
-161
-141
-139
149
169
-179
-167
-154
-139
-134
.14
.12
.05
.06
.10
.14
.21
.15
.13
.09
.08
.14
.27
.42
39 (SOT 143 STYLE)
NE02139
TYPICAL NOISE PARAMETERS
(T
A
= 25擄C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
螕
OPT
MAG
ANG
Rn/50
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA
500
1000
1500
2000
1.8
2.1
2.3
2.6
17.5
12.5
9.5
7.5
0.11
0.27
0.36
0.43
156
168
-156
-147
.20
.16
.18
.21
California Eastern Laboratories