September 1996
NDT453N
N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.
Features
8A, 30V. R
DS(ON)
= 0.028
鈩?/div>
@ V
GS
= 10V.
R
DS(ON)
= 0.042
鈩?/div>
@ V
GS
= 4.5V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
___________________________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
T
A
= 25擄C unless otherwise not
NDT453N
30
鹵20
(Note 1a)
Units
V
V
A
鹵8
鹵15
(Note 1a)
(Note 1b)
(Note 1c)
3
1.3
1.1
-65 to 150
W
T
J
,T
STG
Operating and Storage Temperature Range
擄C
THERMAL CHARACTERISTICS
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
擄C/W
擄C/W
* Order option J23Z for cropped center drain lead.
漏 1997 Fairchild Semiconductor Corporation
NDT453N Rev. D1
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