NDT452 Datasheet

IC型號：
NDT452
PDF描述：
P-Channel Enhancement Mode Field Effect Transistor
文件大小：
95.75KB
PDF頁數(shù)：
6頁
芯片廠家：
FAIRCHILD

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June 1996

NDT452AP

P-Channel Enhancement Mode Field Effect Transistor

General Description

Power SOT P-Channel enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance

and provide superior switching performance. These devices

are particularly suited for low voltage applications such as

notebook computer power management and DC motor

control.

Features

-5A, -30V. R

DS(ON)

= 0.065

鈩?/div>

@ V

= -10V

DS(ON)

= 0.1

鈩?/div>

@ V

= -4.5V.

High density cell design for extremely low R

DS(ON)

High power and current handling capability in a widely used

surface mount package.

________________________________________________________________________________

Absolute Maximum Ratings

Symbol

DSS

GSS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

Maximum Power Dissipation

= 25擄C unless otherwise noted

NDT452AP

-30

鹵20

(Note 1a)

Units

-5

- 15

(Note 1a)

(Note 1b)

(Note 1c)

1.3

1.1

-65 to 150

STG

Operating and Storage Temperature Range

擄C

THERMAL CHARACTERISTICS

胃

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

擄C/W

* Order option J23Z for cropped center drain lead.

漏 1997 Fairchild Semiconductor Corporation

NDT452AP Rev. B1

型號

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N-Channel Enhancement Mode Field Effect Transistor

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