July 1996
NDT451AN
N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as DC motor control and DC/DC
conversion where fast switching, low in-line power loss,
and resistance to transients are needed.
Features
7.2A, 30V. R
DS(ON)
= 0.035
鈩?/div>
@ V
GS
= 10V
R
DS(ON)
= 0.05
鈩?/div>
@ V
GS
= 4.5V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
________________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
P
D
Maximum Power Dissipation
T
A
= 25擄C unless otherwise noted
NDT451AN
30
鹵 20
(Note 1a)
Units
V
V
A
鹵 7.2
鹵 25
(Note 1a)
(Note 1b)
(Note 1c)
3
1.3
1.1
-65 to 150
W
T
J
,T
STG
Operating and Storage Temperature Range
擄C
THERMAL CHARACTERISTICS
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
擄C/W
擄C/W
* Order option J23Z for cropped center drain lead.
漏 1997 Fairchild Semiconductor Corporation
NDT451AN Rev. D
next