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NDT3055 Datasheet

  • NDT3055

  • N-Channel Enhancement Mode Field Effect Transistor

  • 228.07KB

  • 8頁(yè)

  • FAIRCHILD

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May 1998
NDT3055
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as DC motor control and
DC/DC conversion where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
4 A, 60 V. R
DS(ON)
= 0.100
鈩?/div>
@ V
GS
= 10 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
SuperSOT
TM
-3
SuperSOT -6
TM
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D
D
D
D
S
D
G
SOT-223
G
D
S
S
SOT-223*
(J23Z)
G
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
T
A
= 25
o
C unless otherwise noted
NDT3055
60
鹵20
(Note 1a)
Units
V
V
A
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
4
25
3
1.3
1.1
-65 to 150
W
T
J
,T
STG
R
胃
JA
R
胃
JC
Operating and Storage Temperature Range
擄C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
擄C/W
擄C/W
* Order option J23Z for cropped center drain lead.
漏 1998 Fairchild Semiconductor Corporation
NDT3055 Rev.B

NDT3055 產(chǎn)品屬性

  • High Voltage Switches for Power ProcessingSMPS Power Switch

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 60V

  • 4A

  • 100 毫歐 @ 4A，10V

  • 4V @ 250µA

  • 15nC @ 10V

  • 250pF @ 30V

  • 1.1W

  • 表面貼裝

  • TO-261-4，TO-261AA

  • SOT-223-3

  • 帶卷 (TR)

  • NDT3055TR

NDT3055相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
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    MOSFET N-CH 60V 4A SOT-223-4
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    MOSFET N-CH 60V 4A SOT-223-4
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  • 英文版
    Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Eleme...
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  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 4A I(D) | S...
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  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3.7A I(D) |...
    ETC

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