NDT2955 Datasheet

IC型號(hào)：
NDT2955
PDF描述：
P-Channel Enhancement Mode Field Effect Transistor
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FAIRCHILD

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September 1996

NDT2955

P-Channel Enhancement Mode Field Effect Transistor

General Description

Power SOT P-Channel enhancement mode power field

effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize

on-state resistance and provide superior switching

performance. These devices are particularly suited for low

voltage applications such as notebook computer power

management and DC motor control.

Features

-2.5A, -60V. R

DS(ON)

= 0.3

鈩?/div>

@ V

= -10V.

High density cell design for extremely low R

DS(ON)

High power and current handling capability in a widely used

surface mount package.

_______________________________________________________________________________________________________

Absolute Maximum Ratings

Symbol

DSS

GSS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

- Continuous

- Pulsed

Maximum Power Dissipation

= 25擄C unless otherwise noted

NDT2955

-60

鹵20

(Note 1a)

Units

-2.5

-15

(Note 1a)

(Note 1b)

(Note 1c)

1.3

1.1

-65 to 150

STG

Operating and Storage Temperature Range

擄C

THERMAL CHARACTERISTICS

胃

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

擄C/W

* Order option J23Z for cropped center drain lead.

漏 1997 Fairchild Semiconductor Corporation

NDT2955 Rev. B2

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power ProcessingSMPS Power Switch
標(biāo)準(zhǔn)包裝
4,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET P 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
60V
電流 - 連續(xù)漏極(Id) @ 25° C
2.5A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
300 毫歐 @ 2.5A，10V
Id 時(shí)的 Vgs(th)（最大）
4V @ 250µA
閘電荷(Qg) @ Vgs
15nC @ 10V
輸入電容 (Ciss) @ Vds
601pF @ 30V
功率 - 最大
1.1W
安裝類型
表面貼裝
封裝/外殼
TO-261-4，TO-261AA
供應(yīng)商設(shè)備封裝
SOT-223-3
包裝
帶卷 (TR)
其它名稱
NDT2955TR

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