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NDT2955_02 Datasheet

  • NDT2955_02

  • P-Channel Enhancement Mode Field Effect Transistor

  • 128.51KB

  • 5頁

  • FAIRCHILD

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NDT2955
April 2002
NDT2955
P-Channel Enhancement Mode Field Effect Transistor
General Description
This 60V P-Channel MOSFET is produced using
Fairchild Semiconductor鈥檚 high voltage Trench process.
It has been optimized for power management
plications.
Features
鈥?/div>
鈥?.5 A, 鈥?0 V. R
DS(ON)
= 300m鈩?@ V
GS
= 鈥?0 V
R
DS(ON)
= 500m鈩?@ V
GS
= 鈥?.5 V
鈥?/div>
High density cell design for extremely low R
DS(ON)
鈥?/div>
High power and current handling capability in a widely
used surface mount package.
Applications
鈥?/div>
鈥?/div>
DC/DC converter
Power management
D
D
D
D
S
D
SOT-223
S
G
G
D
S
SOT-223
*
(J23Z)
G
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Maximum Power Dissipation
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
鈥?0
鹵20
(Note 1a)
Units
V
V
A
W
鈥?.5
鈥?5
3.0
1.3
1.1
鈥?5 to +150
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
擄C/W
Package Marking and Ordering Information
Device Marking
NDT2955
Device
NDT2955
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
餂?002
Fairchild Semiconductor Corporation
NDT2955 Rev. C

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