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NDT014 Datasheet

  • NDT014

  • N-Channel Enhancement Mode Field Effect Transistor

  • 226.68KB

  • 10頁(yè)

  • FAIRCHILD

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September 1996
NDT014
N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as DC motor control
and DC/DC conversion where fast switching, low in-line power
loss, and resistance to transients are needed.
Features
2.7A, 60V. R
DS(ON)
= 0.2
鈩?/div>
@ V
GS
= 10V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
_________________________________________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Maximum Power Dissipation
T
A
= 25擄C unless otherwise noted
NDT014
60
鹵20
(Note 1a)
Units
V
V
A
鹵2.7
鹵10
(Note 1a)
(Note 1b)
(Note 1c)
3
1.3
1.1
-65 to 150
W
T
J
,T
STG
Operating and Storage Temperature Range
擄C
THERMAL CHARACTERISTICS
R
JA
R
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
擄C/W
擄C/W
* Order option J23Z for cropped center drain lead.
漏 1997 Fairchild Semiconductor Corporation
NDT014 Rev. C1

NDT014 產(chǎn)品屬性

  • High Voltage Switches for Power ProcessingSMPS Power Switch

  • 4,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道,金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 60V

  • 2.7A

  • 200 毫歐 @ 1.6A,10V

  • 4V @ 250µA

  • 11nC @ 10V

  • 155pF @ 25V

  • 1.1W

  • 表面貼裝

  • TO-261-4,TO-261AA

  • SOT-223-3

  • 帶卷 (TR)

  • NDT014TR

NDT014相關(guān)型號(hào)PDF文件下載

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