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NDT014L Datasheet

  • NDT014L

  • N-Channel Logic Level Enhancement Mode Field Effect Transist...

  • 10頁

  • FAIRCHILD

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August 1996
NDT014L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology.This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes.Thesedevices are particularly suited for low voltage
applications such as DC motor control and DC/DC
conversion where fast switching, low in-line power loss, and
resistance to transients are needed.
Features
2.8 A, 60 V. R
DS(ON)
= 0.2
鈩?/div>
@ V
GS
= 4.5 V
R
DS(ON)
= 0.16
鈩?/div>
@ V
GS
= 10 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
_________________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
T
A
= 25擄C unless otherwise noted
NDT014L
60
鹵 20
(Note 1a)
Units
V
V
A
- Continuous
- Pulsed
鹵 2.8
鹵 10
P
D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
3
1.3
1.1
-65 to 150
W
T
J
,T
STG
Operating and Storage Temperature Range
擄C
THERMAL CHARACTERISTICS
R
JA
R
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
擄C/W
擄C/W
漏 1997 Fairchild Semiconductor Corporation
NDT014L Rev.D

NDT014L 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 4,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道,金屬氧化物

  • 邏輯電平門

  • 60V

  • 2.8A

  • 160 毫歐 @ 3.4A,10V

  • 3V @ 250µA

  • 5nC @ 4.5V

  • 214pF @ 30V

  • 1.1W

  • 表面貼裝

  • TO-261-4,TO-261AA

  • SOT-223-4

  • 帶卷 (TR)

  • NDT014L-NDNDT014LTR

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