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NDS9958 Datasheet

  • NDS9958

  • Dual N & P-Channel Enhancement Mode Field Effect Transistor

  • 361.84KB

  • 12頁(yè)

  • FAIRCHILD

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February 1996
NDS9958
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as notebook computer power management, Half bridge motor
control, cellular phone, and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
N-Channel 3.5A, 20V, R
DS(ON)
= 0.1
鈩?/div>
@ V
GS
= 10V.
P-Channel -3.5A , -20V, R
DS(ON)
= 0.1
鈩?/div>
@ V
GS
= -10V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
_______________________________________________________________________________
5
4
3
2
1
6
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25擄C unless otherwise noted
N-Channel
20
鹵 20
(Note 1a)
(Note 1a)
P-Channel
-20
鹵 20
鹵 3.5
鹵 2.8
鹵 14
2
Units
V
V
A
Drain Current - Continuous T
A
= 25擄C
- Continuous T
A
= 70擄C
- Pulsed
T
A
= 25擄C
鹵 3.5
鹵 2.8
鹵 14
P
D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
1.6
1
0.9
-55 to 150
擄C
T
J
,T
STG
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
擄C/W
漏 1997 Fairchild Semiconductor Corporation
NDS9958.SAM

NDS9958 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 陣列

  • -

  • N 和 P 溝道

  • 邏輯電平門(mén)

  • 20V

  • 3.5A

  • 100 毫歐 @ 3.5A，10V

  • 3V @ 250µA

  • 30nC @ 10V

  • 525pF @ 10V

  • 900mW

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 帶卷 (TR)

  • NDS9958TR

NDS9958相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
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  • 英文版
    Single P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    Single P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 4.3A I(D) |...
    ETC
  • 英文版
    Single P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    Single P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    Single N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    Single N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    30V P-Channel PowerTrench MOSFET
    FAIRCHILD
  • 英文版
    Single P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    30V P-Channel PowerTrench MOSFET
    FAIRCHILD ...
  • 英文版
    Dual P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    Dual P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    Dual N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    Dual N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    Dual N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    Dual N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    Dual P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    Dual P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    Dual P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    Dual P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...

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