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NDS9955 Datasheet

  • NDS9955

  • Dual N-Channel Enhancement Mode Field Effect Transistor

  • 8頁

  • FAIRCHILD

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May 1998
NDS9955
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching
performance and minimize on-state resistance. These
devices are particularly suited for low voltage applications
such as disk drive motor control, battery powered circuits
where fast switching, low in-line power loss, and resistance
to transients are needed.
Features
3.0 A, 50 V. R
DS(ON)
= 0.130
鈩?/div>
@ V
GS
= 10 V,
R
DS(ON)
= 0.200
鈩?/div>
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D2
D1
D1
D2
5
6
G2
7
8
4
3
2
1
DS 5
N 5
99
S2
G1
SO-8
pin
1
S1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25
o
C unless other wise noted
NDS9955
50
鹵20
(Note 1a)
Units
V
V
A
3
10
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
1.6
1
0.9
-55 to 150
擄C
T
J
,T
STG
R
胃
JA
R
胃
JC
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
擄C/W
漏 1998 Fairchild Semiconductor Corporation
NDS9955 Rev.A

NDS9955 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 50 V

  • +/- 20 V

  • 3 A

  • 0.13 Ohms

  • Dual Dual Drain

  • + 150 C

  • SMD/SMT

  • SOIC-8 Narrow

  • Reel

  • 7 ns

  • - 55 C

  • 2 W

  • 7.5 ns

  • 20 ns

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