NDS9952A Datasheet

IC型號(hào)：
NDS9952A
PDF描述：
Dual N & P-Channel Enhancement Mode Field Effect Transistor
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366.98KB
PDF頁數(shù)：
13頁
芯片廠家：
FAIRCHILD

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February 1996

NDS9952A

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description

These dual N- and P-channel enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process is especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulses in the

avalanche and commutation modes. These devices are

particularly suited for low voltage applications such as

notebook computer power management and other

battery powered circuits where fast switching, low in-line

power loss, and resistance to transients are needed.

Features

N-Channel 3.7A, 30V, R

DS(ON)

=0.08

鈩?/div>

@ V

=10V.

P-Channel -2.9A, -30V, R

DS(ON)

=0.13

鈩?/div>

@ V

=-10V.

High density cell design or extremely low R

DS(ON)

High power and current handling capability in a widely used

surface mount package.

Dual (N & P-Channel) MOSFET in surface mount package.

________________________________________________________________________________

Absolute Maximum Ratings

Symbol

DSS

GSS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

= 25擄C unless otherwise noted

N-Channel

鹵 20

(Note 1a)

P-Channel

-30

鹵 20

鹵 2.9

鹵 10

Units

鹵 3.7

鹵 15

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.6

0.9

-55 to 150

擄C

STG

Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

胃

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

擄C/W

NDS9952A.SAM

漏 1997 Fairchild Semiconductor Corporation

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power ProcessingSMPS Power Switch
標(biāo)準(zhǔn)包裝
2,500
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
-
FET 型
N 和 P 溝道
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
3.7A，2.9A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
80 毫歐 @ 1A，10V
Id 時(shí)的 Vgs(th)（最大）
2.8V @ 250µA
閘電荷(Qg) @ Vgs
25nC @ 10V
輸入電容 (Ciss) @ Vds
320pF @ 10V
功率 - 最大
900mW
安裝類型
表面貼裝
封裝/外殼
8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝
8-SOICN
包裝
帶卷 (TR)
其它名稱
NDS9952ATR

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