鈩?/div>
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT -6
TM
SuperSOT -8
TM
SO-8
SOT-223
SOIC-16
D2
D1
D1
D2
5
6
G2
7
8
4
3
2
1
S
ND 45
99
S2
G1
SO-8
pin
1
S1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25
o
C unless other wise noted
NDS9945
60
鹵20
(Note 1a)
Units
V
V
A
3.5
10
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
1.6
1
0.9
-55 to 150
擄C
T
J
,T
STG
R
胃
JA
R
胃
JC
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
擄C/W
NDS9945 Rev.B
漏 1998 Fairchild Semiconductor Corporation