NDS9933A
January 1999
NDS9933A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
This P-Channel enhancement mode power field ef-
fect transistor is produced using Fairchild鈥檚 propri-
etary, high cell density, DMOS technology. This very
high density process is especially tailored to mini-
mize on-state resistance and provide superior
switching performance.
These devices are particularly suited for low voltage
apllications such as DC motor control and DC/
DC conversion where fast switching,low in-line
power loss, and resistance to transients are
needed.
Features
鈥?/div>
-2.8 A, -20 V. R
DS(on)
= 0.14
鈩?/div>
@ V
GS
= -4.5 V
R
DS(on)
= 0.19
鈩?/div>
@ V
GS
= -2.7 V
R
DS(on)
= 0.20
鈩?/div>
@ V
GS
= -2.5 V.
鈥?/div>
High density cell design for extremely low R
DS(on)
.
鈥?/div>
High power and current handling capability in a
widely used surface mount package.
鈥?/div>
Dual MOSFET in surface mount package.
D2
D1
D1
D2
5
6
4
3
2
1
G1
SO-8
S1
G1
S2
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
= 25擄C unless otherwise noted
Parameter
NDS9933A
-20
(Note 1a)
Units
V
V
A
W
鹵
8
-2.8
-10
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
-55 to +150
擄
C
T
J
, T
stg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄
C/W
擄
C/W
Package Outlines and Ordering Information
Device Marking
NDS9933A
漏1999
Fairchild Semiconductor Corporation
Device
NDS9933A
Reel Size
13鈥欌€?/div>
Tape Width
12mm
Quantity
2500 units
NDS9933A Rev. A
NDS9933A 產(chǎn)品屬性
2,500
分離式半導(dǎo)體產(chǎn)品
FET - 陣列
-
2 個 P 溝道（雙）
邏輯電平門
20V
2.8A
140 毫歐 @ 2.8A，4.5V
1V @ 250µA
8.5nC @ 4.5V
405pF @ 10V
900mW
表面貼裝
8-SOIC（0.154"，3.90mm 寬）
8-SOICN
帶卷 (TR)
NDS9933A相關(guān)型號PDF文件下載
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型號
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描述
廠商
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-
英文版
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