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NDS9925A Datasheet

  • NDS9925A

  • Dual N-Channel Enhancement Mode Field Effect Transistor

  • 6頁

  • FAIRCHILD

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May 1998
NDS9925A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as notebook computer
power management and other battery powered circuits
where fast switching, low in-line power loss, and
resistance to transients are needed.
Features
4.5 A, 20 V. R
DS(ON)
= 0.060
鈩?/div>
@ V
GS
= 4.5 V
R
DS(ON)
= 0.075
鈩?/div>
@ V
GS
= 2.7 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D2
D1
D1
D2
S
ND 5A
2
99
S2
G2
5
6
7
8
4
3
2
1
SO-8
pin
1
S1
G1
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25擄C unless otherwise noted
NDS9925A
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note 1a)
20
鹵8
4.5
15
2
(Note 1a)
(Note 1b)
(Note 1c)
V
V
A
P
D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
W
1.6
1
0.9
-55 to 150
擄C
T
J
,T
STG
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R
胃JA
R
胃
J
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
擄C/W
漏 1998 Fairchild Semiconductor Corporation
NDS9925A Rev. A

NDS9925A 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 陣列

  • -

  • 2 個 N 溝道（雙）

  • 邏輯電平門

  • 20V

  • 4.5A

  • 60 毫歐 @ 4.5A，4.5V

  • 1V @ 250µA

  • -

  • -

  • 900mW

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 帶卷 (TR)

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