NDS9430A Datasheet

IC型號(hào)：
NDS9430A
PDF描述：
Single P-Channel Enhancement Mode Field Effect Transistor
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PDF頁(yè)數(shù)：
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December 1997

NDS9430A

Single P-Channel Enhancement Mode Field Effect Transistor

General Description

These P-Channel enhancement mode power field effect

transistors are produced using National's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy

pulses in the avalanche and commutation modes. These

devices are particularly suited for low voltage applications such

as notebook computer power management and other battery

powered circuits where fast switching, low in-line power loss,

and resistance to transients are needed.

Features

-5.3A, -20V. R

DS(ON)

= 0.05

鈩?/div>

@ V

= -10V

DS(ON)

= 0.065

鈩?/div>

@ V

= -6V

DS(ON)

= 0.09

鈩?/div>

@ V

= -4.5V.

High density cell design for extremely low R

DS(ON).

High power and current handling capability in a widely used

surface mount package.

___________________________________________________________________________________________

Absolute Maximum Ratings

Symbol

DSS

GSS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

= 25擄C unless otherwise noted

NDS9430A

-20

鹵 20

(Note 1a)

Units

鹵 5.3

鹵 20

Maximum Power Dissipation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

1.2

-55 to 150

STG

Operating and Storage Temperature Range

擄C

THERMAL CHARACTERISTICS

胃

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

擄C/W

漏 1997 Fairchild Semiconductor Corporation

NDS9430A Rev.A

標(biāo)準(zhǔn)包裝
2,500
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET P 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
20V
電流 - 連續(xù)漏極(Id) @ 25° C
5.3A
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C
50 毫歐 @ 5.3A，10V
Id 時(shí)的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
50nC @ 10V
輸入電容 (Ciss) @ Vds
950pF @ 15V
功率 - 最大
1W
安裝類型
表面貼裝
封裝/外殼
8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝
8-SOICN
包裝
帶卷 (TR)

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